Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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14,980
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A SC-97 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-97 4-TFP (9.2x9.2) 50W (Tc) N-Channel 500V 5A (Ta) 1.5 Ohm @ 5A, 10V 4V @ 1mA 17nC @ 10V 780pF @ 10V 10V ±30V
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RFQ
56,800
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A SC-97 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-97 4-TFP (9.2x9.2) 125W (Tc) N-Channel 250V 20A (Ta) 105 mOhm @ 10A, 10V 3.5V @ 1mA 100nC @ 10V 4000pF @ 10V 10V ±20V
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