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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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62,520
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Infineon Technologies | MOSFET N-CH 20V 211A DIRECTFET | HEXFET®, StrongIRFET™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MD | DIRECTFET™ MD | 2.1W (Ta), 63W (Tc) | N-Channel | - | 20V | 38A (Ta), 211A (Tc) | 0.75 mOhm @ 50A, 10V | 1.1V @ 100µA | 158nC @ 4.5V | 8292pF @ 10V | 2.5V, 4.5V | ±12V | ||
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52,920
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Infineon Technologies | MOSFET N-CH 20V 211A DIRECTFET | HEXFET®, StrongIRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MD | DIRECTFET™ MD | 2.1W (Ta), 63W (Tc) | N-Channel | - | 20V | 38A (Ta), 211A (Tc) | 0.75 mOhm @ 50A, 10V | 1.1V @ 100µA | 158nC @ 4.5V | 8292pF @ 10V | 2.5V, 4.5V | ±12V | ||
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GET PRICE |
63,360
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 20V 211A DIRECTFET | HEXFET®, StrongIRFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MD | DIRECTFET™ MD | 2.1W (Ta), 63W (Tc) | N-Channel | - | 20V | 38A (Ta), 211A (Tc) | 0.75 mOhm @ 50A, 10V | 1.1V @ 100µA | 158nC @ 4.5V | 8292pF @ 10V | 2.5V, 4.5V | ±12V |
