- Part Status :
- Packaging :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
15,960
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 40A 3DP 2-7K1A | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 47W (Tc) | N-Channel | - | 40V | 40A (Ta) | 11 mOhm @ 20A, 10V | 2.3V @ 200µA | 29nC @ 10V | 1920pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
56,580
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 40A 3DP 2-7K1A | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | - | N-Channel | - | 30V | 40A (Ta) | 10.8 mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | 1150pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
62,040
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 1A DP | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 40W (Tc) | N-Channel | - | 900V | 1A (Ta) | 9 Ohm @ 500mA, 10V | 4V @ 1mA | 15nC @ 10V | 350pF @ 25V | 10V | ±30V | ||
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GET PRICE |
58,320
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 50A DP TO252-3 | U-MOSVI-H | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 47W (Tc) | N-Channel | - | 30V | 50A (Ta) | 7.5 mOhm @ 25A, 10V | 2.3V @ 200µA | 25.3nC @ 10V | 1700pF @ 10V | 4.5V, 10V | ±20V | ||
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15,340
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 50A DP TO252-3 | U-MOSVI-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 47W (Tc) | N-Channel | - | 30V | 50A (Ta) | 7.5 mOhm @ 25A, 10V | 2.3V @ 200µA | 25.3nC @ 10V | 1700pF @ 10V | 4.5V, 10V | ±20V | |||
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73,340
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 47W (Tc) | N-Channel | - | 30V | 50A (Ta) | 7.5 mOhm @ 25A, 10V | 2.3V @ 200µA | 25.3nC @ 10V | 1700pF @ 10V | 4.5V, 10V | ±20V | |||
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GET PRICE |
78,840
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | ||
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15,400
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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57,080
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V |
