Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTGD4169FT1G
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RFQ
61,960
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ON Semiconductor MOSFET N-CH 30V 2.6A 6-TSOP - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -25°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 900mW (Ta) N-Channel Schottky Diode (Isolated) 30V 2.6A (Ta) 90 mOhm @ 2.6A, 4.5V 1.5V @ 250µA 5.5nC @ 4.5V 295pF @ 15V 2.5V, 4.5V ±12V
NTGD3147FT1G
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RFQ
18,720
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ON Semiconductor MOSFET P-CH 20V 2.2A 6-TSOP - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -25°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 1W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 145 mOhm @ 2.2A, 4.5V 1.5V @ 250µA 5.5nC @ 4.5V 400pF @ 10V 2.5V, 4.5V ±12V
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