- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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18 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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49,740
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ON Semiconductor | MOSFET N-CH 900V 6.5A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TA) | Through Hole | TO-220-3 Full Pack | TO-220-3 Fullpack/TO-220F-3SG | 2W (Ta), 37W (Tc) | N-Channel | - | 900V | 6.5A (Ta) | 2.7 Ohm @ 3.25A, 10V | - | 44nC @ 10V | 850pF @ 30V | 10V | ±30V | ||
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61,760
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|
ON Semiconductor | MOSFET N-CH 600V 17A TO3P | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TA) | Through Hole | TO-3P-3, SC-65-3 | TO-3P-3L | 2.5W (Ta), 170W (Tc) | N-Channel | - | 600V | 17A (Ta) | 610 mOhm @ 7A, 10V | - | 46nC @ 10V | 1200pF @ 30V | 10V | ±30V | ||
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14,040
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|
ON Semiconductor | MOSFET P-CH 100V 27A TO263 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | 65W (Tc) | P-Channel | - | 100V | 27A (Ta) | 77 mOhm @ 14A, 10V | - | 74nC @ 10V | 4200pF @ 20V | 4V, 10V | ±20V | ||
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54,820
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|
Torex Semiconductor Ltd | MOSFET N-CH 20V 4A SOT89 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | TO-243AA | SOT-89 | 2W (Ta) | N-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 2A, 4.5V | 1.4V @ 1mA | - | 320pF @ 10V | 2.5V, 4.5V | ±12V | |||
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46,500
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|
Torex Semiconductor Ltd | MOSFET P-CH 20V 700MA SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 500mW (Ta) | P-Channel | - | 20V | 700mA (Ta) | 300 mOhm @ 400mA, 4.5V | 1.2V @ 1mA | - | 180pF @ 10V | 2.5V, 4.5V | ±12V | |||
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51,140
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|
Torex Semiconductor Ltd | MOSFET N-CH 20V 1A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 500mW (Ta) | N-Channel | - | 20V | 1A (Ta) | 100 mOhm @ 500mA, 4.5V | 1V @ 1mA | - | 220pF @ 10V | 1.5V, 4.5V | ±8V | |||
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48,880
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|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||
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58,340
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Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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74,660
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|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | |||
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55,100
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|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 200MA SSM | U-MOSIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | SC-75, SOT-416 | SSM | 100mW (Ta) | N-Channel | - | 20V | 200mA (Ta) | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 1.5V, 4.5V | ±10V | ||
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17,880
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|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 200MA SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | SC-75, SOT-416 | SSM | 100mW (Ta) | N-Channel | - | 20V | 200mA (Ta) | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 1.5V, 4.5V | ±10V | |||
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19,640
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|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 200MA SSM | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | SC-75, SOT-416 | SSM | 100mW (Ta) | N-Channel | - | 20V | 200mA (Ta) | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 1.5V, 4.5V | ±10V | |||
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GET PRICE |
58,640
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|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | ||
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69,920
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|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
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25,000
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|
Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
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GET PRICE |
61,380
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|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | ||
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66,540
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|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
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58,100
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N -CH 600V 30.8A DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 240W (Tc) | N-Channel | - | 600V | 30.8A (Ta) | 109 mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V |
