11 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
57,420
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GeneSiC Semiconductor TRANS SJT 650V 16A TO276 - Obsolete Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Surface Mount TO-276AA TO-276 330W (Tc) - 650V 16A (Tc) (155°C) 105 mOhm @ 16A - - 1534pF @ 35V - -
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RFQ
65,780
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GeneSiC Semiconductor TRANS SJT 650V 15A TO-257 - Obsolete Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-257-3 TO-257 172W (Tc) - 650V 15A (Tc) (155°C) 105 mOhm @ 15A - - 1534pF @ 35V - -
2N7638-GA
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RFQ
48,300
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GeneSiC Semiconductor TRANS SJT 650V 8A TO276 - Obsolete Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Surface Mount TO-276AA TO-276 200W (Tc) - 650V 8A (Tc) (158°C) 170 mOhm @ 8A - - 720pF @ 35V - -
2N7637-GA
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RFQ
39,520
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GeneSiC Semiconductor TRANS SJT 650V 7A TO-257 - Obsolete Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-257-3 TO-257 80W (Tc) - 650V 7A (Tc) (165°C) 170 mOhm @ 7A - - 720pF @ 35V - -
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RFQ
77,080
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GeneSiC Semiconductor TRANS SJT 650V 4A TO276 - Obsolete Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Surface Mount TO-276AA TO-276 125W (Tc) - 650V 4A (Tc) (165°C) 415 mOhm @ 4A - - 324pF @ 35V - -
2N7635-GA
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RFQ
12,420
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GeneSiC Semiconductor TRANS SJT 650V 4A TO-257 - Obsolete Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-257-3 TO-257 47W (Tc) - 650V 4A (Tc) (165°C) 415 mOhm @ 4A - - 324pF @ 35V - -
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Per Unit
$352.25
RFQ
33,320
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GeneSiC Semiconductor TRANS SJT 600V 100A - Active Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-258-3, TO-258AA TO-258 769W (Tc) - 600V 100A (Tc) 25 mOhm @ 50A - - - - -
HTNFET-D
Per Unit
$225.11
RFQ
23,940
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Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP HTMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 225°C (TJ) Through Hole 8-CDIP Exposed Pad 8-CDIP-EP 50W (Tj) N-Channel 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V
HTNFET-T
Per Unit
$240.64
RFQ
56,680
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Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 4-PIN HTMOS™ Active Bulk MOSFET (Metal Oxide) -55°C ~ 225°C (TJ) Through Hole 4-SIP 4-Power Tab 50W (Tj) N-Channel 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V
GA05JT03-46
Per Unit
$38.66
RFQ
21,960
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GeneSiC Semiconductor TRANS SJT 300V 9A - Active Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-46-3 TO-46 20W (Tc) - 300V 9A (Tc) 240 mOhm @ 5A - - - - -
GA05JT01-46
Per Unit
$32.33
RFQ
42,400
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GeneSiC Semiconductor TRANS SJT 100V 9A - Active Bulk SiC (Silicon Carbide Junction Transistor) -55°C ~ 225°C (TJ) Through Hole TO-46-3 TO-46 20W (Tc) - 100V 9A (Tc) 240 mOhm @ 5A - - - - -
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