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4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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59,980
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Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | HTMOS™ | Active | Bulk | MOSFET (Metal Oxide) | - | Through Hole | - | - | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | ||||
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39,860
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Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | HTMOS™ | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | 8-CDIP Exposed Pad | - | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | ||||
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23,940
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Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | HTMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP Exposed Pad | 8-CDIP-EP | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | ||||
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56,680
One step to sell excess stocks.Or submit Qty to get quotes
|
Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | HTMOS™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 225°C (TJ) | Through Hole | 4-SIP | 4-Power Tab | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V |