Packaging :
Supplier Device Package :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$240.64
RFQ
59,980
One step to sell excess stocks.Or submit Qty to get quotes
Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 4-PIN HTMOS™ Active Bulk MOSFET (Metal Oxide) - Through Hole - - 50W (Tj) N-Channel 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V
Default Photo
Per Unit
$225.11
RFQ
39,860
One step to sell excess stocks.Or submit Qty to get quotes
Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP HTMOS™ Active Tube MOSFET (Metal Oxide) - Through Hole 8-CDIP Exposed Pad - 50W (Tj) N-Channel 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V
HTNFET-D
Per Unit
$225.11
RFQ
23,940
One step to sell excess stocks.Or submit Qty to get quotes
Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP HTMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 225°C (TJ) Through Hole 8-CDIP Exposed Pad 8-CDIP-EP 50W (Tj) N-Channel 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V
HTNFET-T
Per Unit
$240.64
RFQ
56,680
One step to sell excess stocks.Or submit Qty to get quotes
Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 4-PIN HTMOS™ Active Bulk MOSFET (Metal Oxide) -55°C ~ 225°C (TJ) Through Hole 4-SIP 4-Power Tab 50W (Tj) N-Channel 55V - 400 mOhm @ 100mA, 5V 2.4V @ 100µA 4.3nC @ 5V 290pF @ 28V 5V 10V
Page 1 / 1