Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF630FP
GET PRICE
RFQ
18,920
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 200V 9A TO-220FP MESH OVERLAY™ II Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 200V 9A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 250µA 45nC @ 10V 700pF @ 25V 10V ±20V
IRF630
Per Unit
$0.63
RFQ
22,220
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 200V 9A TO-220 MESH OVERLAY™ II Active Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) N-Channel - 200V 9A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 250µA 45nC @ 10V 700pF @ 25V 10V ±20V
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