- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
47,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | |||
|
|
|
43,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | |||
|
|
|
44,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
|
|
|
42,200
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
|
29,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W | N-Channel | - | 600V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
GET PRICE |
74,340
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | ||
|
|
|
13,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | |||
|
|
|
63,960
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | |||
|
|
|
GET PRICE |
45,280
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | ||
|
|
|
18,080
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
|
|
|
48,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
|
|
|
GET PRICE |
56,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | ||
|
|
|
72,300
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
|
36,140
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
|
GET PRICE |
35,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | ||
|
|
|
39,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
|
|
|
13,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
|
|
|
GET PRICE |
70,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | ||
|
|
|
29,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | |||
|
|
|
43,040
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | |||
|
|
|
GET PRICE |
64,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 600V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | ||
|
|
|
41,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 600V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
|
35,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 600V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V |
