Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTP60N20T
Per Unit
$1.97
RFQ
40,220
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 200V 60A TO-220 Trench™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 500W (Tc) N-Channel - 200V 60A (Tc) 40 mOhm @ 30A, 10V 5V @ 250µA 73nC @ 10V 4530pF @ 25V 10V ±20V
IXTA60N20T
Per Unit
$1.87
RFQ
50,020
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 200V 60A TO-263 Trench™ Active Tube MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 500W (Tc) N-Channel - 200V 60A (Tc) 40 mOhm @ 30A, 10V 5V @ 250µA 73nC @ 10V 4530pF @ 25V 10V ±20V
IXTQ48N20T
Per Unit
$1.52
RFQ
44,040
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 200V 48A TO-3P Trench™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 250W (Tc) N-Channel - 200V 48A (Tc) 50 mOhm @ 24A, 10V 4.5V @ 250µA 60nC @ 10V 3090pF @ 25V 10V ±30V
IXTA48N20T
Per Unit
$1.35
RFQ
71,180
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 200V 48A TO-263 Trench™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 250W (Tc) N-Channel - 200V 48A (Tc) 50 mOhm @ 24A, 10V 4.5V @ 250µA 60nC @ 10V 3090pF @ 25V 10V ±30V
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