- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
21,160
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 600V | 15A (Ta) | 300 mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V | |||
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18,540
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | ||||
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34,820
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO-3PN | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 170W (Tc) | N-Channel | - | 600V | 15A (Ta) | 300 mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V | ||||
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52,980
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | ||||
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34,400
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-3PN | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 190W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | ||||
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53,840
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-3PN | DTMOSII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 144W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | ||||
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23,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13A (Ta) | 380 mOhm @ 6.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V |