6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
C2M1000170J-TR
Per Unit
$2.93
RFQ
53,100
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 C2M™ Active Tape & Reel (TR) SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 78W (Tc) N-Channel - 1700V 5.3A (Tc) 1.4 Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V 20V +25V, -10V
C2M0045170D
Per Unit
$45.78
RFQ
24,460
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET NCH 1.7KV 72A TO247 C2M™ Active Tube SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 520W (Tc) N-Channel - 1700V 72A (Tc) 70 mOhm @ 50A, 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1kV 20V +25V, -10V
C2M0080120D
Per Unit
$8.75
RFQ
30,700
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1200V 31.6A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 192W (Tc) N-Channel - 1200V 36A (Tc) 98 mOhm @ 20A, 20V 4V @ 5mA 62nC @ 5V 950pF @ 1000V 20V +25V, -10V
Default Photo
Per Unit
$42.00
RFQ
50,900
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed ZFET SIC DMOSFET, 1700V VDS, RDS C2M™ Active - SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 520W (Tc) N-Channel - 1700V 72A (Tc) 59 mOhm @ 50A, 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1000V 20V +25V, -10V
Default Photo
Per Unit
$18.20
RFQ
75,240
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed ZFET SIC DMOSFET, 1700V VDS, RDS C2M™ Active - SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 277W (Tc) N-Channel - 1700V 40A (Tc) 125 mOhm @ 28A, 20V 4V @ 10mA 120nC @ 20V 2250pF @ 1000V 20V +25V, -10V
C2M1000170J
Per Unit
$2.93
RFQ
58,440
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-7 (Straight Leads) D2PAK (7-Lead) 78W (Tc) N-Channel - 1700V 5.3A (Tc) 1.4 Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V 20V +25V, -10V
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