- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
23,060
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|
Infineon Technologies | MOSFET N-CH 100V 80A TO262-3 | OptiMOS™ 3 | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 150W (Tc) | N-Channel | 100V | 80A (Tc) | 7.2 mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4910pF @ 50V | 6V, 10V | ±20V | ||
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GET PRICE |
15,420
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|
Infineon Technologies | MOSFET N-CH 75V 120A TO220 | OptiMOS™ 3 | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 300W (Tc) | N-Channel | 75V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | 14400pF @ 37.5V | 10V | ±20V | ||
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GET PRICE |
16,800
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|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ 3 | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | 100V | 137A (Tc) | 4.5 mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | ||
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GET PRICE |
45,940
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|
Infineon Technologies | MOSFET N-CH 200 D2PAK-3 | OptiMOS™ 3 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 250W (Tc) | N-Channel | 200V | 88A (Tc) | 11 mOhm @ 88A, 10V | 4.2V @ 260µA | 76nC @ 10V | 650pF @ 100V | 10V | ±20V | ||
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44,920
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|
Infineon Technologies | MOSFET N-CH 200 D2PAK-3 | OptiMOS™ 3 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 250W (Tc) | N-Channel | 200V | 88A (Tc) | 11 mOhm @ 88A, 10V | 4.2V @ 260µA | 76nC @ 10V | 650pF @ 100V | 10V | ±20V | |||
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55,560
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|
Infineon Technologies | MOSFET N-CH 200 D2PAK-3 | OptiMOS™ 3 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 250W (Tc) | N-Channel | 200V | 88A (Tc) | 11 mOhm @ 88A, 10V | 4.2V @ 260µA | 76nC @ 10V | 650pF @ 100V | 10V | ±20V | |||
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78,300
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|
Infineon Technologies | MOSFET N-CH 30V 2A SAWN ON FOIL | OptiMOS™ 3 | Active | - | MOSFET (Metal Oxide) | - | Surface Mount | Die | Sawn on foil | - | N-Channel | 30V | - | 50 mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | 10V | - |
