4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK650A60F,S4X
Per Unit
$0.78
RFQ
45,560
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- U-MOSIX Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 11A (Ta) 650 mOhm @ 5.5A, 10V 4V @ 1.16mA 34nC @ 10V 1320pF @ 300V 10V ±30V
TK750A60F,S4X
Per Unit
$0.73
RFQ
24,860
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- U-MOSIX Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 600V 10A (Ta) 750 mOhm @ 5A, 10V 4V @ 1mA 30nC @ 10V 1130pF @ 300V 10V ±30V
TK1K2A60F,S4X
Per Unit
$0.60
RFQ
26,740
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- U-MOSIX Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 600V 6A (Ta) 1.2 Ohm @ 3A, 10V 4V @ 630µA 21nC @ 10V 740pF @ 300V 10V ±30V
TK1K9A60F,S4X
Per Unit
$0.52
RFQ
26,380
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- U-MOSIX Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 600V 3.7A (Ta) 1.9 Ohm @ 1.9A, 10V 4V @ 400µA 14nC @ 10V 490pF @ 300V 10V ±30V
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