- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
43,140
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CH 30V P-PACK SO-8 | SkyFET®, TrenchFET® Gen III | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 28.6A (Ta), 60A (Tc) | 3.4 mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | 2.52nF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
GET PRICE |
75,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CH 30V P-PACK SO-8 | SkyFET®, TrenchFET® Gen III | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 40.6A (Ta), 60A (Tc) | 2.1 mOhm @ 20A, 10V | 2.5V @ 250µA | 135nC @ 10V | 4.735nF @ 15V | 4.5V, 10V | ±20V |
