- Series :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
58,860
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET BVDSS: 501V 650V TO251 | Automotive, AEC-Q101 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3, IPak, Short Leads | TO-251 | 41W (Tc) | N-Channel | 650V | 2.8A (Tc) | 3.5 Ohm @ 1.5A, 10V | 4V @ 250µA | 12.6nC @ 10V | 354pF @ 25V | 10V | ±30V | |||
|
|
|
72,180
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET BVDSS: 651V 800V TO251 | Automotive, AEC-Q101 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3, IPak, Short Leads | TO-251 | 113W (Tc) | N-Channel | 700V | 11A (Tc) | 600 mOhm @ 2.4A, 10V | 4V @ 250µA | 18.2nC @ 10V | 643pF @ 25V | 10V | ±30V | |||
|
|
|
31,100
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET BVDSS: 501V 650V TO251 | Automotive, AEC-Q101 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3, IPak, Short Leads | TO-251 | 125W (Tc) | N-Channel | 650V | 5.5A (Tc) | 1.4 Ohm @ 2.5A, 10V | 4V @ 250µA | 25nC @ 10V | 886pF @ 50V | 10V | ±30V | |||
|
|
|
74,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET BVDSS: 651V 800V TO251 | Automotive, AEC-Q101 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3, IPak, Short Leads | TO-251 | 68W (Tc) | N-Channel | 700V | 7A (Tc) | 900 mOhm @ 1.5A, 10V | 4V @ 250µA | 18.4nC @ 10V | 603pF @ 50V | 10V | ±30V | |||
|
|
|
51,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET P-CH 450V 4.6A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3, IPak, Short Leads | TO-251 | 104W (Tc) | P-Channel | 450V | 4.6A (Tc) | 4.9 Ohm @ 1.05A, 10V | 5V @ 250µA | 13.7nC @ 10V | 547pF @ 25V | 10V | ±30V |
