- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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25,040
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ON Semiconductor | MOSFET N-CH 200V 4A TO-126 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 | 12.8W (Tc) | N-Channel | - | 200V | 4A (Tc) | 360 mOhm @ 2A, 10V | 4V @ 250µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | ||
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GET PRICE |
42,440
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 200V 4A TO-126 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 | 12.8W (Tc) | N-Channel | - | 200V | 4A (Tc) | 360 mOhm @ 2A, 10V | 2V @ 250µA | 19nC @ 5V | 490pF @ 25V | 5V, 10V | ±20V |
