- Manufacture :
- Technology :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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- Input Capacitance (Ciss) (Max) @ Vds :
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6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
43,800
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Renesas Electronics America | MOSFET N-CH 200V 40A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | 200V | 40A (Ta) | 36 mOhm @ 20A, 10V | - | 72nC @ 10V | 2900pF @ 25V | 10V | ±30V | ||
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GET PRICE |
33,220
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|
Renesas Electronics America | MOSFET N-CH 1500V 2A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 50W (Tc) | N-Channel | 1500V | 2A (Ta) | 12 Ohm @ 1A, 15V | - | - | 984.7pF @ 30V | 15V | ±20V | ||
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42,740
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Renesas Electronics America | MOSFET N-CH 500V 25A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | 500V | 25A (Ta) | 240 mOhm @ 12.5A, 10V | - | 66nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
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GET PRICE |
17,720
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|
Renesas Electronics America | MOSFET N-CH 600V 30A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | 600V | 30A (Ta) | 235 mOhm @ 15A, 10V | - | 92nC @ 10V | 4100pF @ 25V | 10V | ±30V | ||
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GET PRICE |
43,980
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Renesas Electronics America | MOSFET N-CH 600V 21A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | 600V | 21A (Ta) | 360 mOhm @ 10.5A, 10V | - | 67nC @ 10V | 2600pF @ 25V | 10V | ±30V | ||
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40,000
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|
Rohm Semiconductor | MOSFET N-CH 1700V 3.7A | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 35W (Tc) | N-Channel | 1700V | 3.7A (Tc) | 1.5 Ohm @ 1.1A, 18V | 4V @ 900µA | 14nC @ 18V | 184pF @ 800V | 18V | +22V, -6V |
