4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
45,160
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Renesas Electronics America MOSFET N-CH 600V 0.1A TO92 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92(1) 900mW (Ta) N-Channel - 600V 100mA (Ta) 52 Ohm @ 50mA, 10V - 3.7nC @ 10V 25pF @ 25V 10V ±30V
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Per Unit
$0.22
RFQ
15,920
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Renesas Electronics America MOSFET N-CH 400V 3A TO92 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92(1) 2.54W (Tc) N-Channel - 400V 3A (Ta) 2.9 Ohm @ 1.5A, 10V - 6nC @ 100V 165pF @ 25V 10V ±30V
FQNL2N50BTA
Per Unit
$0.51
RFQ
32,240
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ON Semiconductor MOSFET N-CH 500V 0.35A TO-92-3 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92-3 1.5W (Tc) N-Channel - 500V 350mA (Tc) 5.3 Ohm @ 175mA, 10V 3.7V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V
FQNL2N50BTA
Per Unit
$0.20
RFQ
61,500
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ON Semiconductor MOSFET N-CH 500V 0.35A TO-92-3 QFET® Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92-3 1.5W (Tc) N-Channel - 500V 350mA (Tc) 5.3 Ohm @ 175mA, 10V 3.7V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V
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