6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.19
RFQ
13,580
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHANNEL 500V 3A IPAK - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 69W (Tc) N-Channel - 500V 3A (Tc) 3.2 Ohm @ 1.5A, 10V 4.5V @ 250µA 12nC @ 10V 177pF @ 100V 10V ±30V
SIHU4N80E-GE3
Per Unit
$1.12
RFQ
71,260
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHAN 800V TO-251 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 69W (Tc) N-Channel - 800V 4.3A (Tc) 1.27 Ohm @ 2A, 10V 4V @ 250µA 32nC @ 10V 622pF @ 100V 10V ±30V
STU6N90K5
Per Unit
$1.22
RFQ
21,620
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics N-CHANNEL 900 V, 2.1 OHM TYP., 3 MDmesh™ K5 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 110W (Tc) N-Channel - 900V 6A (Tc) 1.1 Ohm @ 3A, 10V 5V @ 100µA - - 10V ±30V
SIHU2N80E-GE3
Per Unit
$0.91
RFQ
50,200
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 800V 2.8A IPAK E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 62.5W (Tc) N-Channel - 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
SIHU6N65E-GE3
Per Unit
$0.98
RFQ
47,900
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 650V 6A IPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 78W (Tc) N-Channel - 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
SIHU6N80E-GE3
Per Unit
$1.34
RFQ
41,460
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHAN 800V TO-251 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 78W (Tc) N-Channel - 800V 5.4A (Tc) 940 mOhm @ 3A, 10V 4V @ 250µA 44nC @ 10V 827pF @ 100V 10V ±30V
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