- Manufacture :
- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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13,580
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|
Vishay Siliconix | MOSFET N-CHANNEL 500V 3A IPAK | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 69W (Tc) | N-Channel | - | 500V | 3A (Tc) | 3.2 Ohm @ 1.5A, 10V | 4.5V @ 250µA | 12nC @ 10V | 177pF @ 100V | 10V | ±30V | ||||
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71,260
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|
Vishay Siliconix | MOSFET N-CHAN 800V TO-251 | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 69W (Tc) | N-Channel | - | 800V | 4.3A (Tc) | 1.27 Ohm @ 2A, 10V | 4V @ 250µA | 32nC @ 10V | 622pF @ 100V | 10V | ±30V | ||||
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21,620
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|
STMicroelectronics | N-CHANNEL 900 V, 2.1 OHM TYP., 3 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 900V | 6A (Tc) | 1.1 Ohm @ 3A, 10V | 5V @ 100µA | - | - | 10V | ±30V | ||||
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50,200
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|
Vishay Siliconix | MOSFET N-CH 800V 2.8A IPAK | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 62.5W (Tc) | N-Channel | - | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V | ||||
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47,900
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|
Vishay Siliconix | MOSFET N-CH 650V 6A IPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 78W (Tc) | N-Channel | - | 650V | 7A (Tc) | 600 mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | 820pF @ 100V | 10V | ±30V | ||||
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41,460
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CHAN 800V TO-251 | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Long Leads, IPak, TO-251AB | IPAK (TO-251) | 78W (Tc) | N-Channel | - | 800V | 5.4A (Tc) | 940 mOhm @ 3A, 10V | 4V @ 250µA | 44nC @ 10V | 827pF @ 100V | 10V | ±30V |