Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
5LP01SP-AC
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RFQ
46,080
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ON Semiconductor MOSFET P-CH 50V .07A - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole SC-72 3-SPA 250mW (Ta) P-Channel 50V 70mA (Ta) 23 Ohm @ 40mA, 4V - 1.4nC @ 10V 7.4pF @ 10V 1.5V, 4V ±10V
5LP01SP
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RFQ
20,780
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ON Semiconductor MOSFET P-CH 50V .07A - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole SC-72 3-SPA 250mW (Ta) P-Channel 50V 70mA (Ta) 23 Ohm @ 40mA, 4V - 1.4nC @ 10V 7.4pF @ 10V 1.5V, 4V ±10V
5LN01SP
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RFQ
60,460
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ON Semiconductor MOSFET N-CH 50V 0.1A - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole SC-72 3-SPA 250mW (Ta) N-Channel 50V 100mA (Ta) 7.8 Ohm @ 50mA, 4V 1.3V @ 100µA 1.57nC @ 10V 6.6pF @ 10V 1.5V, 4V ±10V
5LN01SP-AC
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RFQ
54,820
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ON Semiconductor MOSFET N-CH 50V 100MA SPA - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Through Hole SC-72 3-SPA 250mW (Ta) N-Channel 50V 100mA (Ta) 7.8 Ohm @ 50mA, 4V 1.3V @ 100µA 1.57nC @ 10V 6.6pF @ 10V 1.5V, 4V ±10V
5LN01SP-AC
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RFQ
19,700
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ON Semiconductor MOSFET N-CH 50V 100MA SPA - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Through Hole SC-72 3-SPA 250mW (Ta) N-Channel 50V 100mA (Ta) 7.8 Ohm @ 50mA, 4V 1.3V @ 100µA 1.57nC @ 10V 6.6pF @ 10V 1.5V, 4V ±10V
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