Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF1405ZL-7PPBF
GET PRICE
RFQ
51,060
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 150A TO263CA-7 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-263-7 (Straight Leads) TO-263CA-7 230W (Tc) N-Channel - 55V 120A (Tc) 4.9 mOhm @ 88A, 10V 4V @ 150µA 230nC @ 10V 5360pF @ 25V 10V ±20V
C2M1000170J
Per Unit
$2.93
RFQ
58,440
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-7 (Straight Leads) D2PAK (7-Lead) 78W (Tc) N-Channel - 1700V 5.3A (Tc) 1.4 Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V 20V +25V, -10V
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