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7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
32,200
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|
Infineon Technologies | MOSFET N-CH 100V DIRECTFET-SJ | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 3W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
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GET PRICE |
40,300
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|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
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GET PRICE |
14,600
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|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
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GET PRICE |
44,560
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|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
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GET PRICE |
20,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
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24,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | |||
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22,420
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V |
