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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$2.13
RFQ
71,840
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ON Semiconductor UNIFET N-CHANNEL 500V MOSFET LDT - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 (Formed Leads) TO-3PN (L-Forming) 205W (Tc) N-Channel 500V 16.5A (Tc) 380 mOhm @ 8.3A, 10V 5V @ 250µA 45nC @ 10V 1945pF @ 25V 10V ±30V
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