Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
GET PRICE
RFQ
55,800
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 30V 126A ICEPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 5-ICEPAK 4-ICEPAK - E1 PAD (6.3x4.9) 2.8W (Ta), 89W (Tc) N-Channel 30V 26A (Ta), 148A (Tc) 2.6 mOhm @ 24A, 10V 2.4V @ 250µA 61nC @ 10V 4270pF @ 15V 4.5V, 10V ±20V
Default Photo
GET PRICE
RFQ
74,380
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 25V 129A ICEPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 5-ICEPAK 4-ICEPAK - E1 PAD (6.3x4.9) 2.8W (Ta), 89W (Tc) N-Channel 25V 26.7A (Ta), 151A (Tc) 2.6 mOhm @ 29A, 10V 2.4V @ 250µA 66nC @ 10V 4360pF @ 15V 4.5V, 10V ±20V
Page 1 / 1