- Part Status :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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16,420
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Diodes Incorporated | MOSFET P-CH 30V TSOT-26 | - | Preliminary | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | - | - | 1.38W | P-Channel | 30V | 4.3A (Ta) | 50 mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | 642pF @ 25V | 4.5V, 10V | ±25V | ||
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62,620
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|
Diodes Incorporated | MOSFET P-CH 30V TSOT-26 | - | Preliminary | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | - | - | 1.38W | P-Channel | 30V | 4.3A (Ta) | 50 mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | 642pF @ 25V | 4.5V, 10V | ±25V | ||
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56,740
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|
Diodes Incorporated | MOSFET N-CH 30V 3.2A X2DFN1006-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1006-3 | 1.38W | N-Channel | 30V | 3.2A (Ta) | 69 mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.52nC @ 4.5V | 150pF @ 15V | 1.8V, 8V | 12V |
