Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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58,400
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Renesas Electronics America MOSFET N-CH 55V 60A TO-220 - Active Bulk MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262 1.8W (Ta), 105W (Tc) N-Channel 55V 60A (Tc) 6 mOhm @ 30A, 10V 4V @ 250µA 63nC @ 10V 3750pF @ 25V 10V ±20V
NP60N055MUK-S18-AY
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RFQ
62,740
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Renesas Electronics America MOSFET N-CH 55V 60A TO-220 - Active Bulk MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220 1.8W (Ta), 105W (Tc) N-Channel 55V 60A (Tc) 6 mOhm @ 30A, 10V 4V @ 250µA 63nC @ 10V 3750pF @ 25V 10V ±20V
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RFQ
55,260
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Renesas Electronics America MOSFET N-CH 40V 60A TO-220 - Active Bulk MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262-3 1.8W (Ta), 105W (Tc) N-Channel 40V 60A (Tc) 4.3 mOhm @ 30A, 10V 4V @ 250µA 63nC @ 10V 3680pF @ 25V 10V ±20V
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RFQ
71,140
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Renesas Electronics America MOSFET N-CH 40V 60A TO-220 - Active Bulk MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220 1.8W (Ta), 105W (Tc) N-Channel 40V 60A (Tc) 4.3 mOhm @ 30A, 10V 4V @ 250µA 63nC @ 10V 3680pF @ 25V 10V ±20V
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