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14 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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32,360
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Microsemi Corporation | IGBT 1200V 69A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 69A | 1200V | PT | 3.9V @ 15V, 25A | 90A | 500µJ (on), 438µJ (off) | 110nC | 12ns/70ns | 600V, 25A, 5 Ohm, 15V | |||
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60,900
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Microsemi Corporation | IGBT 900V 72A 417W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 72A | 900V | PT | 3.9V @ 15V, 25A | 110A | 370µJ (off) | 110nC | 13ns/55ns | 600V, 40A, 4.3 Ohm, 15V | |||
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49,020
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Microsemi Corporation | IGBT 1200V 69A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 69A | 1200V | PT | 3.9V @ 15V, 25A | 90A | 500µJ (on), 440µJ (off) | 110nC | 12ns/70ns | 600V, 25A, 5 Ohm, 15V | |||
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38,380
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IXYS | IGBT 3600V 92A ISOPLUS I5PAK | BIMOSFET™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | 417W | ISOPLUSi5-Pak™ | 1.95µs | 92A | 3600V | - | 3.4V @ 15V, 60A | 720A | - | 450nC | 50ns/340ns | 960V, 60A, 4.7 Ohm, 15V | |||
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GET PRICE |
37,860
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Microsemi Corporation | IGBT 900V 72A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 72A | 900V | PT | 3.9V @ 15V, 25A | 110A | 370µJ (off) | 110nC | 13ns/55ns | 600V, 25A, 5 Ohm, 15V | ||
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45,860
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ON Semiconductor | IGBT 600V 50A TO247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247-3 | 94ns | 100A | 650V | Trench Field Stop | 2V @ 15V, 50A | 200A | 1.5mJ (on), 460µJ (off) | 220nC | 100ns/237ns | 400V, 50A, 10 Ohm, 15V | |||
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47,060
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ON Semiconductor | IGBT 600V 50A TO247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247-3 | 94ns | 100A | 600V | Trench Field Stop | 2V @ 15V, 50A | 200A | 1.5mJ (on), 460µJ (off) | 220nC | 100ns/237ns | 400V, 50A, 10 Ohm, 15V | |||
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75,740
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ON Semiconductor | IGBT 50A 600V TO-247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247-3 | 94ns | 100A | 600V | Trench | 2V @ 15V, 50A | 200A | 1.5mJ (on), 460µJ (off) | 220nC | 100ns/237ns | 400V, 50A, 10 Ohm, 15V | |||
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38,280
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ON Semiconductor | IGBT FIELD STOP 650V TO247-4 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | 417W | TO-247-4L | 94ns | 160A | 650V | Field Stop | 2V @ 15V, 50A | 160A | 420µJ (on), 550µJ (off) | 215nC | 23ns/123ns | 400V, 50A, 10 Ohm, 15V | |||
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49,460
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Alpha & Omega Semiconductor Inc. | IGBT 600V 120A 417W TO247 | Alpha IGBT™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 | 137ns | 120A | 600V | - | 2.4V @ 15V, 60A | 210A | 3.1mJ (on), 730µJ (off) | 75nC | 32ns/74ns | 400V, 60A, 5 Ohm, 15V | |||
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14,160
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IXYS | IGBT 4500V 90A 417W I5-PAK | XPT™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | 417W | ISOPLUSi5-Pak™ | - | 90A | 4500V | - | 3.3V @ 15V, 60A | 680A | - | 366nC | 55ns/450ns | 960V, 60A, 4.7 Ohm, 15V | |||
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41,680
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IXYS | IGBT 3000V | BIMOSFET™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | 417W | ISOPLUSi5-Pak™ | 864ns | 50A | 3000V | - | 6V @ 15V, 20A | 430A | 23mJ (on), 2.6mJ (off) | 425nC | 33ns/370ns | 1500V, 20A, 3 Ohm, 15V | |||
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14,620
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ON Semiconductor | IGBT 600V 80A 417W TO247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 | 73ns | 80A | 600V | Trench Field Stop | 2.61V @ 15V, 40A | 160A | 1.17mJ (on), 280µJ (off) | 228nC | 98ns/213ns | 400V, 40A, 10 Ohm, 15V | |||
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17,740
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ON Semiconductor | IGBT 1200V 64A 417W TO247 | - | Active | Tube | Standard | - | Through Hole | TO-247-3 | 417W | TO-247 | - | 64A | 1200V | NPT | 3.2V @ 15V, 40A | 160A | 2.3mJ (on), 1.1mJ (off) | 220nC | 15ns/110ns | 600V, 40A, 5 Ohm, 15V |
