Supplier Device Package :
Current - Collector (Ic) (Max) :
Voltage - Collector Emitter Breakdown (Max) :
Vce(on) (Max) @ Vge, Ic :
Current - Collector Pulsed (Icm) :
Gate Charge :
Td (on/off) @ 25°C :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Reverse Recovery Time (trr) Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) IGBT Type Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
APT50GN60BDQ2G
Per Unit
$3.92
RFQ
68,460
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation IGBT 600V 107A 366W TO247 - Active Tube Standard -55°C ~ 175°C (TJ) Through Hole TO-247-3 366W TO-247 [B] - 107A 600V Trench Field Stop 1.85V @ 15V, 50A 150A 1185µJ (on), 1565µJ (off) 325nC 20ns/230ns 400V, 50A, 4.3 Ohm, 15V
APT50GN60BG
Per Unit
$2.63
RFQ
34,880
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation IGBT 600V 107A 366W TO247 - Active Tube Standard -55°C ~ 175°C (TJ) Through Hole TO-247-3 366W TO-247 [B] - 107A 600V Trench Field Stop 1.85V @ 15V, 50A 150A 1185µJ (on), 1565µJ (off) 325nC 20ns/230ns 400V, 50A, 4.3 Ohm, 15V
NGTB40N65FL2WG
Per Unit
$2.75
RFQ
48,860
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor IGBT 650V 80A 366W TO247 - Active Tube Standard -55°C ~ 175°C (TJ) Through Hole TO-247-3 366W TO-247 72ns 80A 650V Trench Field Stop 2V @ 15V, 40A 160A 970µJ (on), 440µJ (off) 170nC 84ns/177ns 400V, 40A, 10 Ohm, 15V
NGTB40N60FL2WG
Per Unit
$2.65
RFQ
47,940
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor IGBT 600V 80A 366W TO247 - Active Tube Standard -55°C ~ 175°C (TJ) Through Hole TO-247-3 366W TO-247 72ns 80A 600V Trench Field Stop 2V @ 15V, 40A 160A 970µJ (on), 440µJ (off) 170nC 84ns/177ns 400V, 40A, 10 Ohm, 15V
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