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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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32,360
One step to sell excess stocks.Or submit Qty to get quotes
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Microsemi Corporation | IGBT 1200V 69A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 69A | 1200V | PT | 3.9V @ 15V, 25A | 90A | 500µJ (on), 438µJ (off) | 110nC | 12ns/70ns | 600V, 25A, 5 Ohm, 15V | |||
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49,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | IGBT 1200V 69A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 69A | 1200V | PT | 3.9V @ 15V, 25A | 90A | 500µJ (on), 440µJ (off) | 110nC | 12ns/70ns | 600V, 25A, 5 Ohm, 15V |
