Package / Case :
Power - Max :
Supplier Device Package :
Current - Collector (Ic) (Max) :
Voltage - Collector Emitter Breakdown (Max) :
Td (on/off) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Reverse Recovery Time (trr) Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) IGBT Type Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
Default Photo
Per Unit
$1.71
RFQ
53,760
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor IGBT TRENCH 650V 140A TO247 - Active Tube Standard -55°C ~ 175°C (TJ) Through Hole TO-247-3 300W TO-247 70ns 140A 650V Trench 2.45V @ 15V, 50A 140A 1.25mJ (on), 530µJ (off) 128nC 75ns/128ns 400V, 50A, 10 Ohm, 15V
Default Photo
GET PRICE
RFQ
59,100
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage IGBT 600V 50A 240W TO3P LH - Obsolete Tube Standard 150°C (TJ) Through Hole TO-3PL 240W TO-3P(LH) - 50A 600V - 2.45V @ 15V, 50A 100A 1.3mJ (on), 1.34mJ (off) - 90ns/300ns 300V, 50A, 13 Ohm, 15V
Page 1 / 1