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2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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53,760
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ON Semiconductor | IGBT TRENCH 650V 140A TO247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 300W | TO-247 | 70ns | 140A | 650V | Trench | 2.45V @ 15V, 50A | 140A | 1.25mJ (on), 530µJ (off) | 128nC | 75ns/128ns | 400V, 50A, 10 Ohm, 15V | ||||
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59,100
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|
Toshiba Semiconductor and Storage | IGBT 600V 50A 240W TO3P LH | - | Obsolete | Tube | Standard | 150°C (TJ) | Through Hole | TO-3PL | 240W | TO-3P(LH) | - | 50A | 600V | - | 2.45V @ 15V, 50A | 100A | 1.3mJ (on), 1.34mJ (off) | - | 90ns/300ns | 300V, 50A, 13 Ohm, 15V |