- Part Status :
- Supplier Device Package :
- Diode Type :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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50,460
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Toshiba Semiconductor and Storage | DIODE ARRAY SCHOTTKY 650V TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Schottky | 1.7V @ 12A | 90µA @ 650V | 1 Pair Common Cathode | 650V | 12A (DC) | Fast Recovery = 200mA (Io) | - | 175°C (Max) | ||||
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49,540
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|
Infineon Technologies | DIODE SCHOTTKY 650V 12A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 1.7V @ 12A | 190µA @ 650V | 1 Pair Common Cathode | 650V | 12A (DC) | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C |