- Part Status :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GET PRICE |
64,160
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ON Semiconductor | DIODE GEN PURP 600V 20A TO220F | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Standard | 20A | 1.4V @ 20A | 20µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | 150°C (Max) | - | ||
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46,820
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ON Semiconductor | DIODE GEN PURP 600V 5A TO220FP | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Standard | 5A | 1.6V @ 5A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | 150°C (Max) | - | |||
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68,660
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ON Semiconductor | 650V 20A SIC SBD | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Silicon Carbide Schottky | 20A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | |||
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53,780
One step to sell excess stocks.Or submit Qty to get quotes
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ON Semiconductor | 650V 10A SIC SBD | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Silicon Carbide Schottky | 10A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz |
