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- Voltage - Forward (Vf) (Max) @ If :
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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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36,780
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IXYS | DIODE GEN PURP 2.2KV 30A I4PAC | - | Active | Tube | Through Hole | TO-251-2, IPak | i4-PAC | Standard | 30A | 1.25V @ 30A | 40µA @ 2200V | 2200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 175°C | 7pF @ 700V, 1MHz | |||
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GET PRICE |
13,340
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|
ON Semiconductor | DIODE GEN PURP 600V 6A TO251 | - | Obsolete | Tube | Through Hole | TO-251-2, IPak | TO-251-2 | Standard | 6A | 1.5V @ 6A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 175°C | - |
