- Part Status :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Voltage - DC Reverse (Vr) (Max) :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
16,140
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|
Powerex Inc. | DIODE GP 1.2KV 50A POWRBLOK | - | Obsolete | Bulk | Chassis Mount | POW-R-BLOK™ Module | POW-R-BLOK™ Module | Standard | 50A (DC) | 1.5V @ 50A | 10mA @ 600V | 1200V | Standard Recovery >500ns, > 200mA (Io) | 800ns | - | - | ||
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GET PRICE |
43,640
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|
Powerex Inc. | DIODE GEN PURP 600V 50A POWRBLOK | - | Obsolete | Bulk | Chassis Mount | POW-R-BLOK™ Module | POW-R-BLOK™ Module | Standard | 50A (DC) | 1.5V @ 50A | 10mA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 800ns | - | - | ||
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19,700
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|
Infineon Technologies | DIODE GEN PURP 1.7KV 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 2.15V @ 50A | 27µA @ 1700V | 1700V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 150°C | - | ||
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GET PRICE |
13,000
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 2.1V @ 50A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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GET PRICE |
31,940
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 1.9V @ 50A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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GET PRICE |
71,580
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|
Infineon Technologies | DIODE GEN PURP 1.7KV 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 1.8V @ 50A | 27µA @ 1700V | 1700V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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|
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GET PRICE |
76,020
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 1.6V @ 50A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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|
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GET PRICE |
18,020
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|
Infineon Technologies | DIODE GEN PURP 600V 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 1.25V @ 50A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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GET PRICE |
44,900
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|
Infineon Technologies | DIODE GEN PURP 600V 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 1.25V @ 50A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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GET PRICE |
44,200
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|
Infineon Technologies | DIODE GEN PURP 600V 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 1.9V @ 50A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | ||
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GET PRICE |
64,800
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|
Infineon Technologies | DIODE GEN PURP 600V 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 1.9V @ 50A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | ||
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|
|
14,060
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|
Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-268 | - | Active | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | Silicon Carbide Schottky | 50A (DC) | - | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
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62,780
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|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 50A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 50A (DC) | 1.8V @ 15A | 30µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | 952pF @ 1V, 1MHz | |||
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|
GET PRICE |
33,700
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|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 50A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 50A (DC) | 1.7V @ 50A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 2984pF @ 1V, 1MHz | ||
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|
GET PRICE |
43,160
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 50A TO263-3 | - | Active | Digi-Reel® | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | Standard | 50A (DC) | 2.15V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 243ns | -55°C ~ 150°C | - | ||
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|
66,660
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 50A TO263-3 | - | Active | Cut Tape (CT) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | Standard | 50A (DC) | 2.15V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 243ns | -55°C ~ 150°C | - | |||
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|
26,720
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 50A TO263-3 | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | Standard | 50A (DC) | 2.15V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 243ns | -55°C ~ 150°C | - | |||
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|
44,820
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|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 50A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 50A (DC) | 1.8V @ 50A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 3174pF @ 1V, 1MHz | |||
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|
40,160
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 50A WAFER | - | Active | - | - | - | - | Standard | 50A (DC) | 1.97V @ 50A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | |||
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22,440
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|
Microsemi Corporation | DIODE SCHOTTKY 700V 50A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 50A (DC) | 1.5V @ 50A | - | 700V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
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19,340
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 50A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Standard | 50A (DC) | 2.15V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 243ns | -55°C ~ 150°C | - | |||
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|
57,440
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|
Global Power Technologies Group | DIODE SCHOTTKY 600V 50A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 50A (DC) | 1.65V @ 50A | 170µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2635pF @ 1V, 1MHz |
