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33 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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48,160
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Infineon Technologies | DIODE SIC 600V 4A SAWN WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Die | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||
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42,320
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Infineon Technologies | DIODE SCHOTTKY 650V 4A VSON-4 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||
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63,220
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Infineon Technologies | DIODE SCHOTTKY 650V 4A TO263-2 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 4A (DC) | 1.8V @ 4A | 670µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||
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29,340
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Infineon Technologies | DIODE SCHOTTKY 650V 4A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||
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15,240
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2FP | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||
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28,360
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 4A (DC) | 2.3V @ 4A | 25µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 80pF @ 1V, 1MHz | ||
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36,040
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Infineon Technologies | DIODE SCHOTTKY 600V 4A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 150pF @ 1V, 1MHz | ||
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71,780
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO252-3 | thinQ!™ | Obsolete | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-TO252-3 | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 150pF @ 0V, 1MHz | ||
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GET PRICE |
16,880
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||
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64,680
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A D2PAK | HEXFRED® | Preliminary | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 4A (DC) | 2.2V @ 8A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 42ns | -55°C ~ 150°C | - | ||
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15,120
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A D2PAK | HEXFRED® | Preliminary | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 4A (DC) | 2.2V @ 8A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 42ns | -55°C ~ 150°C | - | ||
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34,340
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Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 4A DO221BC | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | Schottky | 4A (DC) | 570mV @ 8A | 1.85mA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
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53,920
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 4A (DC) | 2.3V @ 4A | 25µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 80pF @ 1V, 1MHz | |||
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62,720
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STMicroelectronics | DIODE GEN PURP 600V 4A DO201AD | TURBOSWITCH™ | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A (DC) | 1.75V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | 125°C (Max) | - | ||
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34,420
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STMicroelectronics | DIODE GEN PURP 600V 4A DO201AD | TURBOSWITCH™ | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A (DC) | 1.75V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | 125°C (Max) | - | ||
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GET PRICE |
39,380
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 150pF @ 0V, 1MHz | ||
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51,680
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A D2PAK | HEXFRED® | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 4A (DC) | 2.2V @ 8A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 42ns | -55°C ~ 150°C | - | |||
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27,840
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO252-3 | thinQ!™ | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 4A (DC) | 2.3V @ 4A | 25µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 80pF @ 1V, 1MHz | |||
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16,460
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Infineon Technologies | DIODE SCHOTTKY 650V 4A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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27,860
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Infineon Technologies | DIODE SCHOTTKY 650V 4A TO263-2 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 4A (DC) | 1.8V @ 4A | 670µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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70,560
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
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55,700
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 100V | 100V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
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50,380
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 4A TO220-F2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220-F2 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 2A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 120pF @ 0V, 1MHz | |||
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64,640
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Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 4A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 125pF @ 1V, 1MHz | |||
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57,900
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Microsemi Corporation | DIODE GEN PURP 4A B-MELF | - | Active | Bulk | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard | 4A (DC) | 1V @ 200mA | 1nA @ 125V | - | Standard Recovery >500ns, > 200mA (Io) | 3µs | -65°C ~ 150°C | - | |||
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64,080
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
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15,160
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Rohm Semiconductor | DIODE SCHOTTKY 650V 4A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | - | Silicon Carbide Schottky | 4A (DC) | 1.5V @ 4A | 20µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 200pF @ 1V, 1MHz | |||
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GET PRICE |
25,600
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 1A TO252-2 | Zero Recovery™ | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 4A (DC) | 1.8V @ 1A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 80pF @ 0V, 1MHz | ||
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14,160
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 1A TO252-2 | Zero Recovery™ | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 4A (DC) | 1.8V @ 1A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 80pF @ 0V, 1MHz | |||
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56,400
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 1A TO252-2 | Zero Recovery™ | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 4A (DC) | 1.8V @ 1A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 80pF @ 0V, 1MHz |
