- Part Status :
- Mounting Type :
- Package / Case :
-
- Die (5)
- DO-203AA, DO-4, Stud (1)
- TO-204AA, TO-3 (1)
- TO-220-2 (12)
- TO-220-2 Full Pack (2)
- TO-220-2 Full Pack, Isolated Tab (1)
- TO-220-3 (2)
- TO-247-2 (13)
- TO-247-3 (2)
- TO-252-3, DPak (2 Leads + Tab), SC-63 (1)
- TO-263-3, D²Pak (2 Leads + Tab) Variant (3)
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (4)
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA (1)
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Applied Filters :
36 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
52,780
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|
Infineon Technologies | DIODE SCHOTTKY 650V 30A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 1.1mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 860pF @ 1V, 1MHz | ||
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GET PRICE |
33,300
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|
Microsemi Corporation | DIODE GEN PURP 400V 30A TO204AA | - | Discontinued at Digi-Key | Bulk | Chassis Mount | TO-204AA, TO-3 | TO-204AA (TO-3) | Standard | 30A (DC) | 1.1V @ 15A | 15mA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 175°C | - | ||
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GET PRICE |
26,680
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|
Renesas Electronics America | DIODE GEN PURP 600V 30A TO220FP | - | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | Standard | 30A (DC) | 3V @ 30A | 1µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 25ns | 150°C (Max) | - | ||
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GET PRICE |
72,640
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|
Infineon Technologies | DIODE GEN PURP 600V 30A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 30A (DC) | 1.25V @ 30A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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GET PRICE |
12,540
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|
Infineon Technologies | DIODE GEN PURP 600V 30A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 30A (DC) | 1.25V @ 30A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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GET PRICE |
59,660
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|
Infineon Technologies | DIODE GEN PURP 600V 30A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 30A (DC) | 1.6V @ 30A | 27µA @ 600V | 600V | Fast Recovery = 200mA (Io) | - | -40°C ~ 175°C | - | ||
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GET PRICE |
57,860
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|
Infineon Technologies | DIODE GEN PURP 600V 30A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 30A (DC) | 1.95V @ 30A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | ||
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GET PRICE |
41,460
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|
Infineon Technologies | DIODE GEN PURP 600V 30A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 30A (DC) | 1.95V @ 30A | 27µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | ||
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63,860
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|
Global Power Technologies Group | DIODE SCHOTTKY 650V 30A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | 527pF @ 1V, 1MHz | |||
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17,360
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|
Global Power Technologies Group | DIODE SCHOTTKY 600V 30A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 10A | 40µA @ 600V | 600V | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | 527pF @ 1V, 1MHz | |||
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14,280
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|
Global Power Technologies Group | DIODE SCHOTTKY 650V 30A TO252 | Amp+™ | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | 527pF @ 1V, 1MHz | |||
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27,540
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|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 30A 45V TO-263AB | - | Active | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Schottky | 30A (DC) | 700mV @ 30A | 2mA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
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12,400
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|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 30A 45V TO-263AB | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Schottky | 30A (DC) | 700mV @ 30A | 2mA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
|
|
35,200
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|
Global Power Technologies Group | DIODE SCHOTTKY 600V 30A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 10A | 40µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -50°C ~ 175°C | 527pF @ 1V, 1MHz | |||
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|
GET PRICE |
79,880
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|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 30A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 1790pF @ 1V, 1MHz | ||
|
|
59,560
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|
Infineon Technologies | DIODE GEN PURP 650V 30A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | Standard | 30A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | - | |||
|
|
71,420
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|
Microsemi Corporation | DIODE GEN PURP 600V 30A DO4 | - | Active | Bulk | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard | 30A (DC) | 1.35V @ 30A | 15µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 175°C | - | |||
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69,120
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|
Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-268 | - | Active | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | Silicon Carbide Schottky | 30A (DC) | - | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
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23,840
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|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 30A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 30A | 60µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1905pF @ 1V, 1MHz | |||
|
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30,260
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|
Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-220 | - | Active | - | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10kHz | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | - | |||
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55,860
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|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 30A TO263AB | TMBS® | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Schottky | 30A (DC) | 700mV @ 30A | 2mA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | 200°C (Max) | - | |||
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|
|
76,640
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|
ON Semiconductor | 1200V 20A AUTO SIC SBD | Automotive, AEC-Q101 | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1220pF @ 1V, 100KHz | |||
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|
|
32,860
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|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 30A TO247-2 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | 1220pF @ 1V, 100KHz | |||
|
|
39,360
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|
Microsemi Corporation | DIODE SCHOTTKY 700V 30A TO220-3 | - | Active | - | Through Hole | TO-220-3 | TO-220-3 | Silicon Carbide Schottky | 30A (DC) | 1.5V @ 30A | - | 700V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
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|
28,940
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|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 30A TO220AC | TMBS® | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Schottky | 30A (DC) | 700mV @ 30A | 2mA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | 200°C (Max) | - | |||
|
|
27,620
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|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 10A TO220-2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 480pF @ 0V, 1MHz | |||
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GET PRICE |
66,600
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|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 30A SMPD | eSMP®, TMBS® | Active | Digi-Reel® | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | SMPD | Schottky | 30A (DC) | 650mV @ 30A | 3mA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | ||
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|
|
22,680
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|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 30A SMPD | eSMP®, TMBS® | Active | Cut Tape (CT) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | SMPD | Schottky | 30A (DC) | 650mV @ 30A | 3mA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
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|
|
28,040
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 45V 30A SMPD | eSMP®, TMBS® | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | SMPD | Schottky | 30A (DC) | 650mV @ 30A | 3mA @ 45V | 45V | Fast Recovery = 200mA (Io) | - | -40°C ~ 150°C | - | |||
|
|
27,440
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|
ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 30A | 200µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 1705pF @ 1V, 100kHz |
