- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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36,400
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 50A TO247AD | Automotive, AEC-Q101, FRED Pt® | Active | - | Through Hole | TO-247-2 | TO-247AD | Standard | 50A | 2.55V @ 50A | 330µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 262ns | -55°C ~ 175°C | - | |||
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16,080
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 50A TO247AD | FRED Pt® | Active | - | Through Hole | TO-247-2 | TO-247AD | Standard | 50A | 2.55V @ 50A | 330µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 262ns | -55°C ~ 175°C | - | |||
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50,500
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|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
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70,440
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|
ON Semiconductor | DIODE GEN PURP 600V 50A TO247-2 | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 50A | 1.6V @ 50A | 250µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 90ns | -55°C ~ 175°C | - | |||
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16,800
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|
ON Semiconductor | DIODE GEN PURP 600V 50A TO247-2 | Automotive, AEC-Q101, Stealth™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 50A | 1.69V @ 50A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 163ns | -55°C ~ 175°C | - | |||
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44,740
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|
ON Semiconductor | DIODE GEN PURP 600V 50A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 50A | 1.6V @ 50A | 250µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
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12,540
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|
ON Semiconductor | DIODE GEN PURP 600V 50A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 50A | 2.1V @ 50A | 250µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 175°C | - | |||
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29,240
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | DIODE GEN PURP 600V 50A TO247 | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 50A | 2.1V @ 50A | 250µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 60ns | -55°C ~ 175°C | - | |||
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43,440
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | DIODE GEN PURP 600V 50A TO247 | Stealth™ | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 50A | 1.54V @ 50A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 124ns | -55°C ~ 175°C | - |
