- Manufacture :
- Mounting Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Voltage - DC Reverse (Vr) (Max) :
- Operating Temperature - Junction :
5 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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42,060
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|
Semtech Corporation | DIODE GEN PURP 22.5KV 50MA AXIAL | - | Active | Bulk | Through Hole | Axial | Standard | 50mA | 30V @ 100mA | 1µA @ 22500V | 22500V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | - | ||||
|
36,140
One step to sell excess stocks.Or submit Qty to get quotes
|
Semtech Corporation | DIODE GEN PURP 15KV 50MA AXIAL | - | Active | Bulk | Through Hole | Axial | Standard | 50mA | 20V @ 100mA | 1µA @ 15000V | 15000V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | - | ||||
|
59,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Semtech Corporation | DIODE GEN PURP 45KV 50MA AXIAL | - | Active | Bulk | Through Hole | Axial | Standard | 50mA | 60V @ 100mA | 1µA @ 45000V | 45000V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | - | ||||
|
20,380
One step to sell excess stocks.Or submit Qty to get quotes
|
Semtech Corporation | DIODE GEN PURP 37.5KV 50MA AXIAL | - | Active | Bulk | Through Hole | Axial | Standard | 50mA | 50V @ 100mA | 1µA @ 37500V | 37500V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | - | ||||
|
78,300
One step to sell excess stocks.Or submit Qty to get quotes
|
MICROSS/On Semiconductor | DIODE GEN PURP 20V 50MA DIE | - | Active | Tray | Surface Mount | Die | Standard | 50mA | 1.1V @ 50mA | 50nA @ 20V | 20V | Standard Recovery >500ns, > 200mA (Io) | 700ns | 175°C (Max) | 1pF @ 0V, 1MHz |