- Manufacture :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
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13 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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78,460
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|
Microsemi Corporation | DIODE GEN PURP 50V 300MA AXIAL | Military, MIL-PRF-19500/609 | Active | Bulk | Through Hole | D, Axial | - | Standard | 300mA | 1.1V @ 300mA | 100nA @ 50V | 50V | Fast Recovery = 200mA (Io) | 5ns | -65°C ~ 175°C | - | ||||
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36,000
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|
Microsemi Corporation | DIODE GEN PURP 50V 300MA B-MELF | Military, MIL-PRF-19500/609 | Active | Bulk | Surface Mount | SQ-MELF, B | D-5B | Standard | 300mA | 1.1V @ 300mA | 100nA @ 50V | 50V | Fast Recovery = 200mA (Io) | 5ns | -65°C ~ 175°C | - | ||||
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17,180
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|
Microsemi Corporation | DIODE GEN PURP 50V 300MA AXIAL | Military, MIL-PRF-19500/609 | Active | Bulk | Through Hole | D, Axial | D-5D | Standard | 300mA (DC) | 1.1V @ 300mA | 100µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 5ns | -65°C ~ 175°C | - | ||||
|
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20,220
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|
ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | - | Obsolete | Tape & Reel (TR) | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard | 200mA | 1.1V @ 300mA | 100nA @ 150V | 150V | Small Signal =< 200mA (Io), Any Speed | 50ns | 175°C (Max) | 2pF @ 0V, 1MHz | |||
|
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25,760
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|
ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | - | Obsolete | Tape & Box (TB) | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard | 200mA | 1.1V @ 300mA | 100nA @ 150V | 150V | Small Signal =< 200mA (Io), Any Speed | 50ns | 175°C (Max) | 2pF @ 0V, 1MHz | |||
|
65,460
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|
Microsemi Corporation | DIODE GEN PURP 50V 300MA B-MELF | Military, MIL-PRF-19500/609 | Active | Bulk | Surface Mount | SQ-MELF, B | D-5B | Standard | 300mA (DC) | 1.1V @ 300mA | 100µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 5ns | -65°C ~ 175°C | - | ||||
|
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30,980
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|
ON Semiconductor | DIODE GEN PURP 150V 200MA LL34 | - | Active | Digi-Reel® | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | Standard | 200mA | 1.1V @ 300mA | 100nA @ 150V | 150V | Small Signal =< 200mA (Io), Any Speed | 50ns | 175°C (Max) | 2pF @ 0V, 1MHz | |||
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79,580
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|
ON Semiconductor | DIODE GEN PURP 150V 200MA LL34 | - | Active | Cut Tape (CT) | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | Standard | 200mA | 1.1V @ 300mA | 100nA @ 150V | 150V | Small Signal =< 200mA (Io), Any Speed | 50ns | 175°C (Max) | 2pF @ 0V, 1MHz | ||||
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42,940
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|
ON Semiconductor | DIODE GEN PURP 150V 200MA LL34 | - | Active | Tape & Reel (TR) | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | Standard | 200mA | 1.1V @ 300mA | 100nA @ 150V | 150V | Small Signal =< 200mA (Io), Any Speed | 50ns | 175°C (Max) | 2pF @ 0V, 1MHz | ||||
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20,280
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|
ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | - | Active | Cut Tape (CT) | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard | 200mA | 1.1V @ 300mA | 100nA @ 150V | 150V | Small Signal =< 200mA (Io), Any Speed | 50ns | 175°C (Max) | 2pF @ 0V, 1MHz | ||||
|
41,080
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|
ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | - | Active | Tape & Reel (TR) | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard | 200mA | 1.1V @ 300mA | 100nA @ 150V | 150V | Small Signal =< 200mA (Io), Any Speed | 50ns | 175°C (Max) | 2pF @ 0V, 1MHz | ||||
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64,840
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|
ON Semiconductor | DIODE GEN PURP 150V 200MA DO35 | - | Active | Bulk | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard | 200mA | 1.1V @ 300mA | 100nA @ 150V | 150V | Small Signal =< 200mA (Io), Any Speed | 50ns | 175°C (Max) | 2pF @ 0V, 1MHz | ||||
|
15,260
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|
Microsemi Corporation | DIODE GEN PURP 80V DO35 | Military, MIL-PRF-19500/403 | Active | Bulk | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard | - | 1.1V @ 300mA | 100nA @ 75V | 80V | Fast Recovery = 200mA (Io) | 6ns | -65°C ~ 175°C | - |