- Part Status :
- Diode Type :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
32 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GET PRICE |
38,060
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | - | |||
|
GET PRICE |
46,020
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | SUPERECTIFIER® | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 5µs | -65°C ~ 175°C | - | |||
|
GET PRICE |
60,520
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 5A DO201AD | - | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 1.35V @ 5A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 200ns | 125°C (Max) | 28pF @ 4V, 1MHz | |||
|
27,120
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 8A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 920mV @ 8A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
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20,940
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
|
13,400
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
|
59,180
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
|
54,260
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | SUPERECTIFIER® | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | - | ||||
|
34,660
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 8A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 8A | 920mV @ 8A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
|
51,940
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | ||||
|
50,260
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
|
60,740
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
|
59,340
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | SUPERECTIFIER® | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 5µs | -65°C ~ 175°C | - | ||||
|
32,060
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
|
12,700
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
|
64,040
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 9.4A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 28pF @ 4V, 1MHz | ||||
|
37,760
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 30pF @ 4V, 1MHz | ||||
|
36,640
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
|
40,220
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 3A | 850mV @ 3A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
|
34,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | ||||
|
34,440
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
|
47,500
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
|
27,920
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 3A | 850mV @ 3A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
|
33,100
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|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 5A | 800mV @ 5A | 200µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | 175°C (Max) | - | ||||
|
64,580
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
|
53,720
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|
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 3A | 800mV @ 3A | 20µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | 175°C (Max) | - | ||||
|
76,240
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 5A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 5A | 850mV @ 5A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
|
48,660
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|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 5A | 850mV @ 5A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | ||||
|
33,760
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3.5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3.5A | 1.1V @ 3.5A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
|
17,020
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|
SMC Diode Solutions | DIODE SCHOTTKY 100V 5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 5A | 850mV @ 5A | 500µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | 250pF @ 5V, 1MHz |