- Series :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
20 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
27,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
|
50,420
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
|
38,960
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
|
31,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
|
38,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
|
62,800
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 800mV @ 1A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
|
|
51,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 800mV @ 1A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
|
|
20,140
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
|
23,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
|
|
|
38,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
|
21,240
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
|
27,020
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
|
77,120
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
|
38,460
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
|
18,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.1V @ 1A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
|
75,140
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.1V @ 1A | 5µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
|
|
|
56,040
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 800mV @ 1A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
|
|
18,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 800mV @ 1A | 100µA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
|
|
|
56,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
|
|
|
59,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz |
