- Manufacture :
- Series :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
27 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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56,860
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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21,660
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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57,620
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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54,360
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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32,340
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
|
69,620
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
|
42,420
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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13,260
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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26,540
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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12,580
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
|
62,660
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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34,440
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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76,440
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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54,880
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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42,760
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|
Comchip Technology | DIODE GEN PURP 1KV 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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19,180
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|
Comchip Technology | DIODE GEN PURP 800V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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67,400
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|
Comchip Technology | DIODE GEN PURP 600V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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14,680
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 400V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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50,680
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 200V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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43,400
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 100V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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35,640
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 50V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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79,080
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 1KV 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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72,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 800V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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62,800
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 600V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
|
55,360
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 200V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
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32,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 100V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | ||||
|
38,420
One step to sell excess stocks.Or submit Qty to get quotes
|
Comchip Technology | DIODE GEN PURP 50V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz |