- Series :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
17 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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71,900
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|
Central Semiconductor Corp | DIODE GEN PURP 1KV 3A SMC | - | Active | Bulk | Surface Mount | DO-214AB, SMC | SMC | Standard | 3A | 1.7V @ 3A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 100ns | -65°C ~ 175°C | - | |||
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34,680
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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28,060
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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62,680
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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48,600
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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41,900
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 1000V | - | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | ||||
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75,580
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | ||||
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65,440
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | ||||
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56,980
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|
Comchip Technology | DIODE GEN PURP 1KV 3A DO201AA | - | Active | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.7V @ 3A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 30pF @ 4V, 1MHz | ||||
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52,300
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|
Comchip Technology | DIODE GEN PURP 1KV 3A DO201AA | - | Active | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.7V @ 3A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 30pF @ 4V, 1MHz | ||||
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69,420
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|
Comchip Technology | DIODE GEN PURP 800V 3A DO201AA | - | Active | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.7V @ 3A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 30pF @ 4V, 1MHz | ||||
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30,520
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|
Comchip Technology | DIODE GEN PURP 800V 3A DO201AA | - | Active | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.7V @ 3A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 30pF @ 4V, 1MHz | ||||
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58,020
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|
Comchip Technology | DIODE GEN PURP 600V 3A DO201AA | - | Active | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 30pF @ 4V, 1MHz | ||||
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68,860
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|
Comchip Technology | DIODE GEN PURP 600V 3A DO201AA | - | Active | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 30pF @ 4V, 1MHz | ||||
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65,500
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|
Microsemi Corporation | DIODE GEN PURP 900V 1.4A D5B | - | Active | Bulk | Surface Mount | E-MELF | D-5B | Standard | 1.4A | 1.7V @ 3A | 4µA @ 100V | 900V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 150°C | - | ||||
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29,420
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 20µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -40°C ~ 150°C | - | ||||
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79,560
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 20µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -40°C ~ 150°C | - |