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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | |
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GET PRICE |
23,180
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Toshiba Semiconductor and Storage | RF SIGE HETEROJUNCTION BIPOLAR N | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 900mW | UFM | NPN | 100mA | 5.3V | 200 @ 30mA, 5V | 11.2GHz | 1.45dB @ 1GHz | 12.5dB | ||
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21,880
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Toshiba Semiconductor and Storage | RF SIGE HETEROJUNCTION BIPOLAR N | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 900mW | UFM | NPN | 100mA | 5.3V | 200 @ 30mA, 5V | 11.2GHz | 1.45dB @ 1GHz | 12.5dB | |||
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15,560
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | RF SIGE HETEROJUNCTION BIPOLAR N | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 900mW | UFM | NPN | 100mA | 5.3V | 200 @ 30mA, 5V | 11.2GHz | 1.45dB @ 1GHz | 12.5dB |
