- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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30,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | |||
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71,720
One step to sell excess stocks.Or submit Qty to get quotes
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | |||
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65,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | |||
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32,720
One step to sell excess stocks.Or submit Qty to get quotes
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V |
