Package / Case :
Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
APTM100H45SCTG
Per Unit
$90.78
RFQ
78,820
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET 4N-CH 1000V 18A SP4 POWER MOS 7® Active Bulk -40°C ~ 150°C (TJ) Chassis Mount SP4 357W 4 N-Channel (H-Bridge) Standard 1000V (1kV) 18A 540 mOhm @ 9A, 10V 5V @ 2.5mA 154nC @ 10V 4350pF @ 25V
APTM120H29FG
Per Unit
$148.22
RFQ
56,100
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET 4N-CH 1200V 34A SP6 POWER MOS 7® Active Bulk -40°C ~ 150°C (TJ) Chassis Mount SP6 780W 4 N-Channel (H-Bridge) Standard 1200V (1.2kV) 34A 348 mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V
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