Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Per Unit
$7.30
RFQ
72,280
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N/P-CH 100V 62A/54A I4PAC Trench™ Active Tube -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 89W, 132W ISOPLUS i4-PAC™ N and P-Channel Standard 100V 62A, 54A 11 mOhm @ 25A, 10V 4.5V @ 250µA 104nC @ 10V 5080pF @ 25V
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Per Unit
$4.80
RFQ
69,820
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET 2N-CH 100V 100A I5-PAK Trench™ Active Tube -55°C ~ 175°C (TJ) Through Hole ISOPLUSi5-Pak™ 150W ISOPLUSi5-Pak™ 2 N-Channel (Dual) Standard 100V 100A 7.4 mOhm @ 50A, 10V 4.5V @ 250µA 151nC @ 10V 6900pF @ 25V
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