- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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39,760
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N/P-CH 30V 9A/7.4A 8SOP | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 450mW | 8-SOP | N and P-Channel | Logic Level Gate | 30V | 9A, 7.4A | 17 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V | |||
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56,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 9A 8SOP | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 450mW | 8-SOP | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9A | 17 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V |
