- Operating Temperature :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
8 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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51,640
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|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | ||||
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48,680
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|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | - | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | ||||
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76,860
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|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | ||||
|
57,900
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|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | ||||
|
48,820
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|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | ||||
|
74,840
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|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14 Ohm | 10mV @ 20µA | - | 30pF @ 5V | ||||
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45,280
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|
Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8DIP | - | Active | Tube | -20°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 1.3W | 8-PDIP | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | - | - | ||||
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39,080
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|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 0.08A 8DIP | EPAD®, Zero Threshold™ | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14 Ohm | 20mV @ 20µA | - | 30pF @ 5V |